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 TIS73 / TIS74
TIS73 TIS74
G
S
TO-92
D
N-Channel General Purpose Amplifier
This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 54.
Absolute Maximum Ratings*
Symbol
VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current
TA = 25C unless otherwise noted
Parameter
Value
30 - 30 10 -55 to +150
Units
V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
TIS73 / TIS74 625 5.0 83.3 200
Units
mW mW/C C/W C/W
(c)1997 Fairchild Semiconductor Corporation
TIS73 / TIS74
N-Channel General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)GSS IGSS ID(off) VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Drain Cutoff Leakage Current Gate-Source Cutoff Voltage I G = 1.0 A, VDS = 0 VGS = 15 V, VDS = 0 VGS = 15 V, VDS = 0, T A = 100C VDS = 15 V, VGS = 10 V VDS = 15 V, VGS = 10 V, TA = 100C VDS = 15 V, ID = 4.0 nA TIS73 TIS74 - 30 - 2.0 - 5.0 - 2.0 - 5.0 - 10 - 6.0 V nA A nA A V V
- 4.0 - 2.0
ON CHARACTERISTICS
IDSS rDS(on) Zero-Gate Voltage Drain Current* Drain-Source On Resistance VDS = 15 V, VGS = 0 VDS 0.1 V, VGS = 0, f = 1.0 kHz TIS73 TIS74 50 20 100 25 40 mA mA
SMALL-SIGNAL CHARACTERISTICS
Ciss Crss Input Capacitance Reverse Transfer Capacitance VDS = 0, VGS = 10 V, f = 1.0 MHz VDS = 0, VGS = 10 V, f = 1.0 MHz 18 8.0 pF pF
SWITCHING CHARACTERISTICS
tr Rise Time VGS(off) = 10 mA ,VGS(on) = 0, TIS73 I D = 20 mA, VDS = 10 V TIS74 VGS(off) = 10 mA ,VGS(on) = 0, I D = 20 mA, VDS = 10 V VGS(off) = 10 mA ,VGS(on) = 0, TIS73 I D = 20 mA, VDS = 10 V TIS74 3.0 4.0 6.0 25 50 ns ns ns ns ns
ton toff
Turn-On Time Turn-Off Time
*Pulse Test: Pulse Width 300 s, Duty Cycle 3.0%
TIS73 / TIS74
N-Channel General Purpose Amplifier
(continued)
Typical Characteristics
Parametric Interaction
rds ON -- DRAIN ON RESISTANCE ( IDSS - DRAIN CURRENT (mA)
Parametric Interaction
)
IDSS @VDS=15V PULSE
20 10 5
20 10 5
1
2 3 5 7 V GS - GATE-SOURCE VOLTAGE (V)
10
1
2 3 5 7 V GS - GATE-SOURCE VOLTAGE (V)
10
Parametric Interaction
gfs - TRANSCONDUCTANCE (mmhos) Cis (Crs) - CAPACITANCE (pf) 20
Capacitance vs Voltage
f = 0.1-1.0MHz
gfs @ VDS=15V VGS=0V
C is ( V DS
= 10 V )
20
10
gfs @ VDS=15V ID=3mA
10
C
rs
(V
DS
= 0V )
5
5
1
2 3 5 7 V GS - GATE-SOURCE VOLTAGE (V)
10
0
-2
-4 -6 -8 -10 -12 V GS - GATE-SOURCE VOLTAGE (V)
-14
Common Drain-Source Characteristics
-1V
POWER DISSIPATION vs AMBIENT TEMPERATURE
P D - POWER DISSIPATION (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150
100 I D - DRAIN CURRENT (mA) 80 60
V GS = 0V
TO-92
TYP VGS(OFF) = - 5V
-2V
TA = + 25 C
0
40
-3V
20 0
-4V
0
2 4 6 8 V DS - DRAIN -SOURCE VOLTAGE (V)
10
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.


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